Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD

Abstract

In order to investigate the crystallographic orientation dependence of the electrical properties of carbon (C)-doped GaAs epilayers, we performed by high-index GaAs substrates. Epitaxial growths were carried out using atmospheric and low pressure metalorganic chemical vapor deposition (MOCVD) with C tetrabromide (CBr4) as the C source. The electrical properties of C-doped GaAs showed a strong crystallographic orientation dependence. The hole concentrations of the C-doped GaAs epilayers rapidly decreased with increasing offset angle and had a (311)A peak. The crystallographic orientation dependences of hole concentration and of the activation energy, when using both MOCVD systems, showed the same tendency, implying that C incorporation on a growing surface proceeded, through a similar surface reaction process in both MOCVD systems.