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Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

Authors
Huh, KS; Ham, MH; Myoung, JM; Lee, JM; Lee, KI; Chang, JY; Han, SH; Kim, HJ; Lee, WY
Issue Date
2002-10-01
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.10A, pp.L1069 - L1071
Abstract
We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.
Keywords
MOLECULAR-BEAM-EPITAXY; HETEROSTRUCTURES; MOLECULAR-BEAM-EPITAXY; HETEROSTRUCTURES; (Ga,Mn)N; PEMBE; diluted magnetic semiconductor; wide bandgap ferromagnetic semiconductor; carrier-mediated ferromagnetism
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/139139
DOI
10.1143/JJAP.41.L1069
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KIST Article > 2002
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