Growth of ultrahigh carbon-doped InGaAs and its applicationto InP/InGaAs(C) HBTs

Abstract

Growth of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by chemical beam epitaxy (CBE) using carbon tetrabromide (CBr4) as a doping source was investigated. Effects of growth temperature, group V supply pressure, and CBr4 supply pressure on growth rate, composition, mobility, and hole concentration of carbon-doped InGaAs were studied. Ultrahigh net hole concentration and room-temperature mobility of 2 x 10(20)/cm(3) and 33 cm(2)/V.sec, respectively, were achieved. Mobility of the ultrahigh carbon-doped InGaAs, using CBr4 compared favorably to those of CBE grown carbon-doped InGaAs using carbon tetrachloride (CCl4) and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature.. The highly carbon-doped InGaAs layers grown by CBE using CBr4 as a doping source showed a negligible hydrogen passivation effect and were used for the growth of high-performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures.