The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2 Si ferroelectric gate oxide structure

Title
The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2 Si ferroelectric gate oxide structure
Authors
최훈상김은홍최인훈김용태최재형이정용
Keywords
ferroelectric; MFIS structure; memory window; buffer layer
Issue Date
2001-06
Publisher
Thin solid films
Citation
VOL 388, NO 1-2, 226-230
URI
http://pubs.kist.re.kr/handle/201004/13990
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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