A new ferroelectric gate structure for low power operation of non volatile memory devices

Title
A new ferroelectric gate structure for low power operation of non volatile memory devices
Authors
김용태심선일김성일최훈상최인훈Makoto Ishida
Keywords
ferroelectric gate
Issue Date
2001-07
Publisher
Proceeding of International conference on Elctrical Engineering
Citation
VOL 3, 1816-1820
URI
http://pubs.kist.re.kr/handle/201004/14010
Appears in Collections:
KIST Publication > Conference Paper
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