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코발트 실리사이드에 의한 게이트 측벽 기공 형성에 대한 고찰

Other Titles

A consideration of void formation mechanism at gate edge induced by cobalt silicidation

Authors

Yeong-Cheol Kim; 김기영; 김병국

Issue Date

2001-09

Publisher

한국결정성장학회

Citation

한국결정성장학회지, v.12, no.3, pp.166 - 170

Keywords

코발트 실리사이드

ISSN

1225-1429

URI

https://pubs.kist.re.kr/handle/201004/140188

Appears in Collections:

KIST Article > 2001

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