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급속열처리산화법으로 형성시킨 SiO₂/나노결정 Si의 전기적 특성 연구

Other Titles

Electrical properties of metal-oxide-semiconductor structures containing Si nanocrystals fabricated by rapid thermal oxidation process.

Authors

김용; 박경화; 정태훈; 박홍준; 이재열; 최원철; 김은규

Issue Date

2001-04

Publisher

한국진공학회

Citation

한국진공학회지, v.10, no.1, pp.44 - 50

Keywords

급속열처리산화

ISSN

1225-8822

URI

https://pubs.kist.re.kr/handle/201004/140540

Appears in Collections:

KIST Article > 2001

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