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Effects of postannealing on GaN grown by MOCVD on reactive ion beam pretreated sapphire substrate

Other Titles

활성화 이온빔 처리된 사파이어 기판상 MOCVD로 성장시킨 GaN의 열처리 효과

Authors

이상진; 변동진; 홍창희; 김긍호

Issue Date

2001-03

Citation

한국재료학회지 = Korean Journal of Materials Research, v.11, no.3, pp.191 - 196

Keywords

GaN; MOCVD; reactive ion beam; 열처리

ISSN

1225-0562

URI

https://pubs.kist.re.kr/handle/201004/140631

Appears in Collections:

KIST Article > 2001

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