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Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.

Other Titles

활성화 이온빔 처리된 sapphire 기판 위에 성장시킨 MOCVD-GaN 박막의 격자변형량 측정

Authors

김현정; 김긍호

Issue Date

2001-01

Publisher

한국전자현미경학회

Citation

한국전자현미경학회지, v.30, no.4, pp.337 - 345

Keywords

GaN; HOLZ; reactive ion beam; sapphire substrate; lattice strain

ISSN

1225-6773

URI

https://pubs.kist.re.kr/handle/201004/140790

Appears in Collections:

KIST Article > 2001

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