Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Abstract

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas Rowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 x 10(-4) Omega cm on the films deposited by 1.3 keV Ar ions at 100 degreesC. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate. (C) 2001 Elsevier Science B.V. All rights reserved.