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Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Authors

Yi, HT; Cho, J; Choi, WJ; Woo, DH; Kim, SH; Kang, KN

Issue Date

2000-05

Publisher

KLUWER ACADEMIC PUBL

Citation

JOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.10, pp.835 - 836

Keywords

FREE VACANCY DIFFUSION; SUPERLATTICE; FREE VACANCY DIFFUSION; SUPERLATTICE; quantum well intermixing

ISSN

0261-8028

URI

https://pubs.kist.re.kr/handle/201004/141438

DOI

10.1023/A:1006716910637

Appears in Collections:

KIST Article > 2000

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