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dc.contributor.author김효배-
dc.contributor.author김태곤-
dc.contributor.author손정훈-
dc.contributor.author채근화-
dc.contributor.author임성일-
dc.contributor.author황정남-
dc.contributor.author송종한-
dc.date.accessioned2024-01-21T14:33:49Z-
dc.date.available2024-01-21T14:33:49Z-
dc.date.created2022-01-10-
dc.date.issued2000-01-
dc.identifier.issn0374-4914-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141636-
dc.publisher한국물리학회-
dc.titleEffects of Implatation conditions on defect related photoluminescence from si-implanted SiO2 layers-
dc.title.alternativeSi 이온이 주입된 SiO2 층에서 결함과 관련된 광루미네슨스의 이온주입 조건에 따른 효과-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation새물리, v.40, no.1, pp.46 - 50-
dc.citation.title새물리-
dc.citation.volume40-
dc.citation.number1-
dc.citation.startPage46-
dc.citation.endPage50-
dc.subject.keywordAuthorluminescence-
dc.subject.keywordAuthornanocrystal-
dc.subject.keywordAuthorimplantation-
dc.subject.keywordAuthorSiO2-
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KIST Article > 2000
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