Diamond tip fabrication by air-plasma etching of diamond with an oxide mask

Abstract

We have fabricated an array of cone-shaped diamond tips for use as a field electron emitter by air-plasma etching a polycrystalline diamond film with a silicon oxide mask. The difference in etching speed between the mask and the diamond resulted in the formation of cone-shaped diamond tips. Post-treatment with hydrogen plasma was effective in cleaning the diamond tips and increasing the surface conductivity. The emission from the diamond tips was measured with a diode configuration. The threshold field was 3 V mu m(-1), and the emission current was 0.8 nA tip(-1) when the held was raised to 10 V mu m(-1). (C) 1999 Elsevier Science S.A. All rights reserved.