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dc.contributor.authorLee, JI-
dc.contributor.authorBrini, J-
dc.contributor.authorChovet, A-
dc.contributor.authorDimitriadis, CA-
dc.date.accessioned2024-01-21T14:43:43Z-
dc.date.available2024-01-21T14:43:43Z-
dc.date.created2021-09-04-
dc.date.issued1999-12-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141813-
dc.description.abstractApplying a thermal activation model, we show that the power index gamma of low frequency noise(1/f(gamma)) in semiconductor structures can often be directly related to the ratio of thermal energy and a characteristic energy of the trap distribution, when there is a significant band tail or band bending. Some examples are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectLOW-FREQUENCY NOISE-
dc.subject1/F NOISE-
dc.subjectFLUCTUATIONS-
dc.subjectTRANSISTORS-
dc.subjectSILICON-
dc.titleOn 1/f(gamma) noise in semiconductor devices-
dc.typeArticle-
dc.identifier.doi10.1016/S0038-1101(99)00186-0-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.43, no.12, pp.2181 - 2183-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume43-
dc.citation.number12-
dc.citation.startPage2181-
dc.citation.endPage2183-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000084171000012-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLOW-FREQUENCY NOISE-
dc.subject.keywordPlus1/F NOISE-
dc.subject.keywordPlusFLUCTUATIONS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorlow frequency noise-
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