DSpace at KIST: Relative absorption edges of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures by metalorganic chemical vapor deposition

Full metadata record

DC Field	Value	Language
dc.contributor.author	김제원	-
dc.contributor.author	손창식	-
dc.contributor.author	장영근	-
dc.contributor.author	최인훈	-
dc.contributor.author	박영균	-
dc.contributor.author	김용태	-
dc.contributor.author	O. Ambacher	-
dc.contributor.author	M. Stutzmann	-
dc.date.accessioned	2024-01-21T16:06:33Z	-
dc.date.available	2024-01-21T16:06:33Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1999-01	-
dc.identifier.issn	1225-0562	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/142519	-
dc.title	Relative absorption edges of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures by metalorganic chemical vapor deposition	-
dc.title.alternative	유기금속화학기상증착법으로 성장된 GaN/InGaN/GaN 단양자 우물층과 InGaN/GaN 이종접합 구조의 광학적 특성	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국재료학회지 = Korean Journal of Materials Research, v.9, no.1, pp.42 - 45	-
dc.citation.title	한국재료학회지 = Korean Journal of Materials Research	-
dc.citation.volume	9	-
dc.citation.number	1	-
dc.citation.startPage	42	-
dc.citation.endPage	45	-
dc.subject.keywordAuthor	GaN	-

Show Simple Item Record

KIST Library Institutional Repository