Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates

Abstract

Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y2O3 films with 1080 A thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O = 1/1.5 regardless of substrates. Channeling minimum yields of Y2O3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0..8) of Y2O3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y2O3 on Sil(1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites. (C) 1998 Elsevier Science B.V. All rights reserved.