RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices

Other Titles
고집적 소자에 적용되는 저저항 텅스텐 박막에서 응력의 RF power의존성
Authors
이창우고민경오환원우상록윤성로김용태박영균고석중
Issue Date
1998-01
Citation
한국재료학회지 = Korean Journal of Materials Research, v.8, no.11, pp.977 - 981
Keywords
diffusion barrier; tungsten; VLSI; PECVD; stress
ISSN
1225-0562
URI
https://pubs.kist.re.kr/handle/201004/143373
Appears in Collections:
KIST Article > Others
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