DSpace at KIST: Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy

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DC Field	Value	Language
dc.contributor.author	이정욱	-
dc.contributor.author	유지범	-
dc.contributor.author	변동진	-
dc.contributor.author	금동화	-
dc.date.accessioned	2024-01-21T18:14:06Z	-
dc.date.available	2024-01-21T18:14:06Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1997-06	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143753	-
dc.title	Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy	-
dc.title.alternative	Hydride vapor phase epitaxy를 이용한 sapphire 기판 상에 GaN 후막의 성장특성에 관한 연구	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	한국재료학회지 = Korean journal of materials research, v.7, no.6, pp.492 - 497	-
dc.citation.title	한국재료학회지 = Korean journal of materials research	-
dc.citation.volume	7	-
dc.citation.number	6	-
dc.citation.startPage	492	-
dc.citation.endPage	497	-
dc.subject.keywordAuthor	GaN film	-
dc.subject.keywordAuthor	hydride vapor phase epitaxial growth	-
dc.subject.keywordAuthor	ZnO buffer layer	-

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