Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Abstract

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t(p-CBL)), and a doping concentration (n(p-CBL)) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 mu m, t(p-CBL) = 2 mu m, and n(p-CBL), = 1 x 10(18) cm(-3). The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.