Enhancement of magnesium incorporation in nitrogen doped ZnMgSSe grown by molecular beam epitaxy

Abstract

Effect of nitrogen plasma on magnesium incorporation has been investigated for ZnMgSSe based p-n junction device grown on (001) GaAs substrates by molecular beam epitaxy. It was found that magnesium composition in a nitrogen-doped p-type ZnMgSSe layer was larger than that in an n-type ZnMgSSe layer. The magnesium composition increased with increasing nitrogen content in p-type ZnMgSSe. To obtain p- and n-type ZnMgSSe layers of symmetric composition, magnesium beam flux should be reduced during growth of nitrogen-doped p-type ZnMgSSe layer to compensate this enhanced incorporation of magnesium in the nitrogen-doped ZnMgSSe layer. Copyright (C) 1996 Published by Elsevier Science Ltd.