DSpace at KIST: Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures

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DC Field	Value	Language
dc.contributor.author	염상섭	-
dc.contributor.author	김은규	-
dc.contributor.author	민석기	-
dc.contributor.author	한영기	-
dc.contributor.author	임종수	-
dc.contributor.author	손맹호	-
dc.date.accessioned	2024-01-21T19:32:58Z	-
dc.date.available	2024-01-21T19:32:58Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-07	-
dc.identifier.issn	1013-7009	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144398	-
dc.title	Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures	-
dc.title.alternative	MOCVD법에 의한 p-Si(100) 기판위의 TiO2 유전체박막 성장 및 Al/TiO2/p-Si 구조의 전기적 특성	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	응용물리, v.9, no.4, pp.495 - 499	-
dc.citation.title	응용물리	-
dc.citation.volume	9	-
dc.citation.number	4	-
dc.citation.startPage	495	-
dc.citation.endPage	499	-
dc.subject.keywordAuthor	thin films	-
dc.subject.keywordAuthor	MOCVD	-
dc.subject.keywordAuthor	Si substrate	-
dc.subject.keywordAuthor	Al/TiO2 direct film	-
dc.subject.keywordAuthor	MIS structure	-

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