고농도로 탄소도핑된 InGaAs 에피층의 전기적성질에 대한 급속열처리효과

Authors
손창식김성일민병돈김태근김용김무성김은규민석기최인훈
Issue Date
1996-05
Citation
응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.3, pp.368 - 371
Keywords
carbondoping; InGaAs; rapid thermal annealing
URI
https://pubs.kist.re.kr/handle/201004/144451
Appears in Collections:
KIST Article > Others
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