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여러가지 기판방향에서 MOCVD 방법으로 성장한 GaAs 에피층의 탄소 도핑 특성

Authors

민병돈; 황성민; 손창식; 김성일; 김무성; 김은규; 민석기; 박만장

Issue Date

1996-05

Citation

응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.3, pp.372 - 376

Keywords

MOCVD; GaAs epi-layer; carbon doping; substrate orientation

URI

https://pubs.kist.re.kr/handle/201004/144456

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KIST Article > Others

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