Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.

Authors
손창식김성일김태근김용김무성민석기
Issue Date
1996-01
Citation
Solid state communications, v.v. 98, no.no. 5, pp.475 - 478
Keywords
RTA
URI
https://pubs.kist.re.kr/handle/201004/144575
Appears in Collections:
KIST Article > Others
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