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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author황성민-
dc.contributor.author김은규-
dc.contributor.author민병돈-
dc.contributor.author이민석-
dc.contributor.author맹선재-
dc.date.accessioned2024-01-21T20:05:47Z-
dc.date.available2024-01-21T20:05:47Z-
dc.date.created2022-01-10-
dc.date.issued1996-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144724-
dc.titleLateral growth rate enhancement on patterned GaAs substrate in [001] direction with CCl//4 by MOCVD.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationBulletin of the Korean physical society, v.v. 14, no.no. 1, pp.239 - ?-
dc.citation.titleBulletin of the Korean physical society-
dc.citation.volumev. 14-
dc.citation.numberno. 1-
dc.citation.startPage239-
dc.citation.endPage?-
dc.subject.keywordAuthorMOCVD-
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