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Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.

Authors

김성일; 민석기; 김은규; 박영주; 최원철; 이상훈; 손맹호

Issue Date

1996-01

Citation

Bulletin of the Korean physical society, v.v. 14, no.no. 2, pp.507 - ?

Keywords

MOCVD

URI

https://pubs.kist.re.kr/handle/201004/144752

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KIST Article > Others

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