Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films.

Title
Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films.
Authors
J.H. Lee최원준박용주한일기조운조이정일E.K. Kim
Issue Date
2002-09
Publisher
2nd International Conference on Semiconductor Quantum Dots (QD2002)
Citation
, 159-159
URI
http://pubs.kist.re.kr/handle/201004/14482
Appears in Collections:
KIST Publication > Conference Paper
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