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dc.contributor.author박용주-
dc.contributor.author김은규-
dc.contributor.author이종근-
dc.contributor.author최원철-
dc.contributor.author민석기-
dc.date.accessioned2024-01-21T20:45:29Z-
dc.date.available2024-01-21T20:45:29Z-
dc.date.created2022-01-10-
dc.date.issued1995-03-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145161-
dc.titleCharacteristics of Ru and RuO₂ schottky contacts on hydrogenated N-type GaAs.-
dc.title.alternativeN형 GaAs 기판의 수소화에 따른 Ru 및 RuO₂ 쇼트키접촉장벽의 특성 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 8, no.no. 2, pp.132 - 137-
dc.citation.title응용물리-
dc.citation.volumev. 8-
dc.citation.numberno. 2-
dc.citation.startPage132-
dc.citation.endPage137-
dc.subject.keywordAuthorRu-
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