The carbon doping characteristics of GaAs epilayers grown on GaAs substrates with various crystal orientations.

Authors
김성일민석기민병돈황성민김무성
Issue Date
1995-01
Citation
Bull. Korean phys. soc., v.v. 13, no.no. 2, pp.? - ?
Keywords
MOCVD
URI
https://pubs.kist.re.kr/handle/201004/145255
Appears in Collections:
KIST Article > Others
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