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dc.contributor.author김용태-
dc.contributor.author민석기-
dc.contributor.authorC. S. Kwon-
dc.contributor.authorI. H. Choi-
dc.date.accessioned2024-01-21T21:07:12Z-
dc.date.available2024-01-21T21:07:12Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145299-
dc.titleThe characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJapanese journal of applied physics, v.v. 34, pp.78 - 81-
dc.citation.titleJapanese journal of applied physics-
dc.citation.volumev. 34-
dc.citation.startPage78-
dc.citation.endPage81-
dc.subject.keywordAuthornitrogen implantation-
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