High temperature thermal stability of plasma-deposited tungsten nitride Schottky contacts to GaAs

Abstract

Electrical and physical properties of plasma enhanced chemical vapor deposited tungsten nitride (W67N33) Schottky contacts to GaAs are investigated at the rapid thermal annealing (RTA) temperature of 500-1000°C for 30 s. The cross-sectional transmission electron microscopy and second ion mass spectroscopy reveal that the W67N33 Schottky contacts to GaAs maintains the integrity of interface during RTA at 1000°C for 30 s without any reaction of WAs or interdiffusion phenomena. Barrier heights and ideality factors for as-deposited W67N33 contacts to GaAs are 0.86 eV and 1.04, which are changed to 0.72 eV and 1.128 after RTA at 1000°C for 30 s. ？ 1995.