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EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors

KIM, CH; HAN, IK; LEE, JI; KANG, KN; KWON, SD; CHOE, B; PARK, HL; HER, J; LIM, H

Issue Date

1994-04-15

Publisher

CHAPMAN HALL LTD

Citation

JOURNAL OF MATERIALS SCIENCE LETTERS, v.13, no.8, pp.563 - 565

Keywords

RICH SILICON-NITRIDE; INSTABILITIES; STATES; FILMS; RICH SILICON-NITRIDE; INSTABILITIES; STATES; FILMS; SiNx/InP MIS structure

ISSN

0261-8028

URI

https://pubs.kist.re.kr/handle/201004/145599

DOI

10.1007/BF00592609

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KIST Article > Others

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