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Growth rate of MoSi2 layer formed by CVD of Si on Mo substrate and oxidation behavior of MoSi2/Mo couple

Other Titles

Si의 화학증착에 의한 MoSi2층의 성장속도 및 MoSi2/Mo 쌍의 산화특성에 관한 연구

Authors

윤진국; 변지영; 이강욱; 이종무; 김재수

Issue Date

1994-03

Citation

대한금속학회지 = Journal of the Korean inst. of met. & mater., v.32, no.3, pp.313 - 320

Keywords

CVD; MoSi//2 layer; SiCl//4/H//2; hot wall; oxidation

URI

https://pubs.kist.re.kr/handle/201004/145622

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KIST Article > Others

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