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dc.contributor.author서상희-
dc.contributor.authorC. D. Lee-
dc.contributor.authorB. K. Kim-
dc.contributor.authorJ. W. Kim-
dc.contributor.authorS. K. Chang-
dc.date.accessioned2024-01-21T21:42:22Z-
dc.date.available2024-01-21T21:42:22Z-
dc.date.created2022-01-10-
dc.date.issued1994-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145659-
dc.titleStructural properties of ZnSe on GaAs grown by atomic layer epitaxy.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of applied physics, v.v. 76, no.no. 2, pp.928 - 931-
dc.citation.titleJournal of applied physics-
dc.citation.volumev. 76-
dc.citation.numberno. 2-
dc.citation.startPage928-
dc.citation.endPage931-
dc.subject.keywordAuthorZnSe-
dc.subject.keywordAuthoratomic layer epitaxy-
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