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Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.

Authors

강광남; 최원준; 이석; 김용; 김상국; 김회종; 우덕하; 조규만

Issue Date

1994-01

Citation

Bull. Korean phys. soc., v.v. 12, no.no. 1, pp.128 - ?

Keywords

quantum well disordering

URI

https://pubs.kist.re.kr/handle/201004/145797

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KIST Article > Others

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