CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성

Authors
김용손창식김성일이민석김무성최인훈민석기
Issue Date
1994-01
Citation
응용물리, v.7, no.4, pp.278 - 283
Keywords
MOCVD; carbon doping; CCl4
URI
https://pubs.kist.re.kr/handle/201004/145877
Appears in Collections:
KIST Article > Others
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