SEMICONDUCTOR-DEVICES USING THE PLASMA-POLYMERIZED PYRROLE

Authors
PARK, SYLEE, KPCHOI, DHKIM, NJSONG, SK
Issue Date
1994-01
Publisher
GORDON BREACH SCI PUBL LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.247, pp.321 - 329
Abstract
Organic semiconducting thin film of 10(-6) S/cm conductivity was prepared by the plasma polymerization of pyrrole followed by the thermal treatment in nitrogen. Obtained film (TPP-Py) was uniform, pin-hole free, and optically clear. We investigated the electrical and photoelectrical properties of the semiconductor devices consisting of the TPP-Py sandwiched between the two planar electrodes, such as the Au, Al, ITO, and n-Si. It was found that the TPP-Py formed ohmic contact with either Au or ITO electrode and showed a weak photoconducting behavior. On the other hand, the Schottky contact and heterojunction of TPP-Py with Al and n-Si respectively showed the rectification and photovoltaic properties. The performances of these cells were characterized in detail through the measurement of dark- and photoconductivity, and also of the capacitance-voltage (CV) characteristics.
Keywords
FIELD-EFFECT TRANSISTOR; FIELD-EFFECT TRANSISTOR; plasma polymerization; organic semiconductor
ISSN
1058-725X
URI
https://pubs.kist.re.kr/handle/201004/145899
DOI
10.1080/10587259408039218
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KIST Article > Others
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