ELECTRICAL AND OPTICAL-PROPERTIES OF PBTIO3 THIN-FILMS ON P-SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE

Abstract

Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (approximately 500-degrees-C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/P-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 filmS Was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 10(11) eV-1 cm-2 at the middle of the Si energy gap.