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dc.contributor.authorLEE, CW-
dc.contributor.authorKIM, YT-
dc.contributor.authorMIN, SK-
dc.date.accessioned2024-01-21T22:31:27Z-
dc.date.available2024-01-21T22:31:27Z-
dc.date.created2022-01-10-
dc.date.issued1993-06-21-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146026-
dc.description.abstractLow resistive tungsten nitride (W100-xNx) thin films have been deposited at 350-400-degrees-C by plasma enhanced chemical vapor deposition. X-ray photoemission spectroscopy, Rutherford backscattering spectrometry, and x-ray diffraction show that the nitrogen composition in W100-xNx films can be easily controlled between 15 and 72 at. % corresponding to an increase of the NH3/WF6 partial pressure ratio and fcc structure W2N can be obtained. The resistivities of W100-xNx films are varied from 70 to 440 muOMEGA cm according to nitrogen composition.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectDIFFUSION BARRIER-
dc.titleCHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS-
dc.typeArticle-
dc.identifier.doi10.1063/1.109622-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.62, no.25, pp.3312 - 3314-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume62-
dc.citation.number25-
dc.citation.startPage3312-
dc.citation.endPage3314-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1993LH60700031-
dc.identifier.scopusid2-s2.0-36448998924-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusDIFFUSION BARRIER-
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