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Temperature dependent PL characteristics of C-doped GaAs by LPMOCVD.

Authors

김성일; 민석기; 김용; 김무성; 이민석

Issue Date

1993-01

Citation

Bull. Korean phys. soc., v.v. 11, no.no. 1, pp.? - ?

Keywords

MOCVD; GaAs; AlGaAs; temperature; PL

URI

https://pubs.kist.re.kr/handle/201004/146266

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KIST Article > Others

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