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dc.contributor.author김용-
dc.contributor.author김태환-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.date.accessioned2024-01-21T23:08:18Z-
dc.date.available2024-01-21T23:08:18Z-
dc.date.created2022-01-10-
dc.date.issued1992-07-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146416-
dc.titleBehavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of material science letters, v.v. 11, pp.994 - ?-
dc.citation.titleJournal of material science letters-
dc.citation.volumev. 11-
dc.citation.startPage994-
dc.citation.endPage?-
dc.subject.keywordAuthordelta-doping-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthortwo-dimensional-
dc.subject.keywordAuthorelectron gas-
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