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dc.contributor.author서상희-
dc.contributor.author김을락-
dc.contributor.author곽노정-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-22T00:08:33Z-
dc.date.available2024-01-22T00:08:33Z-
dc.date.created2022-01-10-
dc.date.issued1991-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146972-
dc.titleA study on the active layer dissolution of InP/InGaAsP/InP DH structure for 1.55㎛ long-wavelength grown by liquid phase epitaxy-
dc.title.alternativeLPE 법으로 성장시킨 1.55 ㎛ 장파장용 InP/InGaAsP/InP DH 구조의 활성층 용해에 관한 연구-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.4, no.4, pp.474 - 482-
dc.citation.title응용물리-
dc.citation.volume4-
dc.citation.number4-
dc.citation.startPage474-
dc.citation.endPage482-
dc.subject.keywordAuthorLPE-
dc.subject.keywordAuthorInP/InGaAsP/InP-
dc.subject.keywordAuthor활성층용해-
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