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dc.contributor.authorKIM, Y-
dc.contributor.authorKIM, MS-
dc.contributor.authorMIN, SK-
dc.contributor.authorLEE, CC-
dc.contributor.authorYOO, KH-
dc.date.accessioned2024-01-22T00:13:53Z-
dc.date.available2024-01-22T00:13:53Z-
dc.date.created2022-01-10-
dc.date.issued1990-09-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147060-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleSELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION-
dc.typeArticle-
dc.identifier.doi10.1063/1.346451-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.68, no.6, pp.2747 - 2751-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume68-
dc.citation.number6-
dc.citation.startPage2747-
dc.citation.endPage2751-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1990DY61800029-
dc.identifier.scopusid2-s2.0-0006625991-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthordelta-doping-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs-
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