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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.authorKIM, EUN KYU-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.contributor.author이현우-
dc.contributor.author김재관-
dc.contributor.author이주천-
dc.date.accessioned2024-01-22T00:16:57Z-
dc.date.available2024-01-22T00:16:57Z-
dc.date.created2022-01-10-
dc.date.issued1990-04-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147110-
dc.languageEnglish-
dc.publisherAmerican Institute of Physics-
dc.titleStress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJournal of Applied Physics, v.v. 67, pp.3358 - 3364-
dc.citation.titleJournal of Applied Physics-
dc.citation.volumev. 67-
dc.citation.startPage3358-
dc.citation.endPage3364-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorGaAs-on-Si-
dc.subject.keywordAuthorlaser annealing-
dc.subject.keywordAuthorMOCVD-
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