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Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI).

Authors

김용; 조훈영; 김은규; 윤주훈; 조성호; 김무성; 김현수; 민석기

Issue Date

1990-03

Citation

Journal of applied physics, v.v. 67, pp.2454 - ?

Keywords

deep levels; GaAs-on-Si; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/147133

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KIST Article > Others

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