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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author민석기-
dc.contributor.authorS. C. Park-
dc.contributor.authorC. W. Han-
dc.date.accessioned2024-01-22T01:12:21Z-
dc.date.available2024-01-22T01:12:21Z-
dc.date.created2022-01-10-
dc.date.issued1988-03-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147589-
dc.publisherKorean Physical Society-
dc.titleDeep trap studies in HB-GaAs using DLTS and optical DLTS.-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitationJournal of the Korean Physical Society, v.v. 21, no.no. 1, pp.88 - 93-
dc.citation.titleJournal of the Korean Physical Society-
dc.citation.volumev. 21-
dc.citation.numberno. 1-
dc.citation.startPage88-
dc.citation.endPage93-
dc.subject.keywordAuthordeep trap-
dc.subject.keywordAuthorHB-GaAs-
dc.subject.keywordAuthorDLTS-
dc.subject.keywordAuthoroptical DLTS-
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