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Fabrication of diodes using the Si-iBP-Si SOI structure

Authors

주병권; S. R. Rho; S. H. Kim; C. J. Kim

Issue Date

1987-12

Publisher

Korean Physical Society

Citation

Journal of the Korean Physical Society, v.20, no.4, pp.373 - 378

Keywords

silicon on insulator; SOI device

ISSN

0374-4884

URI

https://pubs.kist.re.kr/handle/201004/147697

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KIST Article > Others

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