Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO₂ high-k dielectrics

Title
Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO₂ high-k dielectrics
Authors
염민수심현상정형택김성일김용태
Keywords
high-k dielectrics; atomic layer deposition; MOSFET; interfacial reaction; ZrO₂
Issue Date
2003-08
Publisher
Japanese Journal of Applied Physics, Part 1
Citation
v. 42, no. 8, 5010-5013
URI
http://pubs.kist.re.kr/handle/201004/14797
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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