New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface.

Other Titles
New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface.
Authors
Kim Yong TaeS. K. KwakC. S. KwonD. J. KimC. W. LeeI. H. ChoiMin Suk-Ki
Issue Date
1995-01
URI
https://pubs.kist.re.kr/handle/201004/148892
Appears in Collections:
KIST Publication > Others
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