Characteristics of ultrathin HfO2 gate dielectrics on strained-Di0.74Ge0.26 layers

Title
Characteristics of ultrathin HfO2 gate dielectrics on strained-Di0.74Ge0.26 layers
Authors
이재훈S. Maikpa김도윤R. MahapatraS. K. Ray노영수최원국
Keywords
HfO2
Issue Date
2003-07
Publisher
Applied Physics Letter
Citation
v. 83, no. 4, 779-781
URI
http://pubs.kist.re.kr/handle/201004/14977
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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